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德國(guó)Nanoplus
Nanoplus GmbH 公司于1998年自Würzburg 大學(xué)技術(shù)物理系脫離而創(chuàng)建。其主要活動(dòng)是將研究結(jié)果應(yīng)用于實(shí)際程序與產(chǎn)品內(nèi)，其專門從事光電子學(xué)儀器與客戶指定的微－毫微結(jié)構(gòu)塑造。目前在nanoplus內(nèi)有15名員工。該公司裝備有一條完整的處理線用于半導(dǎo)體激光制造，其包括不同的干式蝕刻系統(tǒng)、噴濺系統(tǒng)、脫水器、掩模對(duì)準(zhǔn)器、激光裝備工具等等，均處于250 m2 的絕對(duì)無塵室設(shè)備中（級(jí)別100－10000）。該公司還具有12 m2 的實(shí)驗(yàn)室空間以用于技術(shù)支持（高純度氣體與水的制備）。?

Nanoplus的主產(chǎn)品是與返回激光偶合的復(fù)合體，它是通過nanoplus自己的獨(dú)特技術(shù)制造的。通過此項(xiàng)技術(shù)實(shí)現(xiàn)的DFB激光具有高單獨(dú)模式產(chǎn)出，高效率，以及高側(cè)模式抑制率（>40dB），其與低背射敏感度與端口接合。近些年所開發(fā)的該技術(shù)不要求過度生長(zhǎng)，即可應(yīng)用與各種半導(dǎo)體，包括基于GaSb、InP與GaAs 的材料。基于這些材料系統(tǒng)，nanoplus制造波長(zhǎng)范圍為0.7到2.5μm的DFB與Fabry-Perot 激光二極管，應(yīng)用于傳感技術(shù)與分光鏡技術(shù)。

此外，nanoplus制造波長(zhǎng)范圍為5到12μm 的量子級(jí)串聯(lián)激光。

Nanoplus was founded in 1998 as a spin-off from the department of Technical Physics at Würzburg University to transfer research results into applications and products with a specialization in optoelectronics devices and customer specific micro- and nano-structuring.

The company is equipped with a complete process line for semiconductor laser fabrication, comprising different dry etch systems, sputter systems, evaporators, mask aligners, laser mounting facilities, etc. in a 250 m2 clean room (class 100-10000). Nanoplus facilities also comprise 120 m2 of laboratory space for technical supply (a/c, high purity gases, water preparation) and 500 m2 of office and characterization space.

A key product of nanoplus are distributed feedback (DFB) laser diodes based on a unique and patented technology. DFB lasers realized by this technique have a high single mode yield, high efficiencies as well as high sidemode supression ratio (SMSR) around 40dB combined with low back reflection sensitivity and thresholds. The technology has been optimized for a wide variety of semiconductor heterostructures including GaSb, InP and GaAs based materials. Based on these material systems, nanoplus produces DFB and Fabry-Perot laser diodes in the wavelength range from 0.7 up to 2.8 μm for sensing and spectroscopy as well as telecom applications.